february 2012 doc id 18336 rev 3 1/13 13 STX0560 high voltage fast-switching npn power transistor features high voltage capability very high switching speed applications compact fluorescent lamps (cfls) smps for battery charger description this device is manufactured using high voltage multi epitaxial planar tec hnology for high switching speeds and high voltage capability. it uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a wide rbsoa. figure 1. internal schematic diagram to-92 to-92 ammopack 1 2 3 table 1. device summary order codes marking package packaging STX0560 x0560 to-92 bag STX0560-ap x0560 to-92ap ammopack www.st.com
electrical ratings STX0560 2/13 doc id 18336 rev 3 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ces collector-emitter voltage (v be = 0) 800 v v ceo collector-emitter voltage (i b = 0) 600 v v ebo emitter-base voltage (i c = 0) 7 v i c collector current 1 a i cm collector peak current (t p < 5 ms) 2 a i b base current 0.5 a i bm base peak current (t p < 5 ms) 1 a p tot total dissipation at t a = 25 c 1.5 w t stg storage temperature -65 to 150 c t j max. operating junction temperature 150 table 3. thermal data symbol parameter value unit r thja thermal resistance junction-ambient _ max 83 c/w
STX0560 electrical characteristics doc id 18336 rev 3 3/13 2 electrical characteristics t case = 25 c unless otherwise specified. table 4. electrical characteristics symbol parameter test conditions min. typ. max. unit i ces collector cut-off current (v be = 0) v ce = 800 v 10 a v (br)ebo emitter-base breakdown voltage (i c = 0) i e = 10 ma 7 v v ceo(sus) (1) 1. pulse test: pulse duration 300 s, duty cycle 2 %. collector-emitter sustaining voltage (i b = 0) i c = 10 ma 600 v v ce(sat) (1) collector-emitter saturation voltage i c = 0.5 a i b = 100 ma 1 v v be(sat) (1) base-emitter saturation voltage i c = 0.5 a i b = 100 ma 1 v h fe dc current gain i c = 5 ma v ce = 5 v i c = 20 ma v ce = 5 v 70 90 t r t s t f resistive load rise time storage time fall time v cc =200 v, i c =0.3 a i b1 =60 ma, i b2 =-120 ma t p =30 s 140 4.4 220 ns s ns
electrical characteristics STX0560 4/13 doc id 18336 rev 3 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. derating curve ! - v ) c ; ! = 6 c e ; 6 = 4 ? # m s ) c - a x 0 u l s e o p e r a t i o n
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